Electron g factor engineering in III-V semiconductors for quantum communications

Electron g-factor Engineering in III-V Semiconductors for Quantum Communications

An entanglement-preserving photo-detector converts photon polarization to electron spin. Up and down spin must respond equally to oppositely polarized photons, creating a requirement for degenerate spin energies, ge ≈0 for electrons. We present a plot of ge-factor versus lattice constant, analogous to bandgap versus lattice constant, that can be used for g-factor engineering of III-V alloys and...

Polarization induced electron populations in III - V nitride semiconductors

Polarization induced electron populations in III-V nitride semiconductors Transport, growth, and device applications by Debdeep Jena The III-V nitride semiconductors (GaN, AlN, InN) exhibit unusually large electronic polarization fields. These polarization fields can be engineered to achieve carrier confinement, doping, and band engineering in novel ways. This work presents work in engineering ...

Ferromagnetism in (III,Mn)V Semiconductors

Magnetic domains in III-V magnetic semiconductors

Recent progress in the theoretical understanding of magnetic anisotropy and stiffness in III-V magnetic semiconductors is exploited for predictions of magnetic domain characteristics and methods of their tuning. We evaluate the width and the energy of domain walls as well as the period of stripe domains in perpendicular films. The computed stripe width W51.1 mm for Ga0.957Mn0.043As/In0.16Ga0.84...

Ferromagnetism in magnetically doped III-V semiconductors.

The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity acceptor levels to the valence band can explain ferromagnetism in GaAs(Mn) in both degenerate and nondegenerate samples. Formation of ferromagnetic clusters and the percolation picture of phase transition describes well all av...